LOW TEMPERATURE SACVD PROCESSES FOR PATTERN LOADING APPLICATIONS
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United States of America Patent
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app pub date -
Jun 11, 2008
filing date -
Jun 15, 2007
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Abstract
A method of improving pattern loading in a deposition of a silicon oxide film is described. The method may include providing a deposition substrate to a deposition chamber, and adjusting a temperature of the deposition substrate to about 250.degree. C. to about 325.degree. C. An ozone containing gas may be introduced to the deposition chamber at a first flow rate of about 1.5 slm to about 3 slm, where the ozone concentration in the gas is about 6% to about 12%, by wt. TEOS may also be introduced to the deposition chamber at a second flow rate of about 2500 mgm to about 4500 mgm. The deposition rate of the silicon oxide film is controlled by a reaction rate of a reaction of the ozone and TEOS at a deposition surface of the substrate.
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