Apparatus for pulling single crystal by CZ method

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United States of America Patent

SERIAL NO

11981477

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Abstract

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In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

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Patent Owner(s)

Patent OwnerAddress
KOMATSU DENSHI KINZOKU KABUSHIKI KAISHAHIRATSUKASHI KANAGAWA 254-0014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ebi, Daisuke Kanagawa, JP 12 34
Hanamoto, Tadayuki Kanagawa, JP 19 304
Hata, Tadashi Ehime, JP 13 52
Hayashi, Kengo Kanagawa, JP 24 129
Hiraishi, Yoshinobu Kanagawa, JP 24 101
Inagaki, Hiroshi Kanagawa, JP 108 1519
Kamogawa, Makoto Kanagawa, JP 16 168
Kawashima, Shigeki Kanagawa, JP 20 104
Kotooka, Toshirou Kanagawa, JP 21 149
Monden, Hiroshi Kanagawa, JP 25 180
Morimoto, Shigeo Kanagawa, JP 63 872
Nakamura, Kentaro Kanagawa, JP 241 2064
Saishoji, Toshiaki Kanagawa, JP 20 88

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