Semiconductor device
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United States of America Patent
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app pub date -
Aug 15, 2008
filing date -
Dec 31, 2004
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Abandoned
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Abstract
A semiconductor device and fabricating method thereof are provided. A dual gate oxide layer is formed by thermal oxidation after carrying out a prescribed pre-processing on an STI edge, which results in a high quality oxide layer by thermal oxidation and a uniformly maintained gate oxide layer thickness of a high voltage device area. The present invention includes a semiconductor substrate divided into an active area and an inactive area, the active area including a high voltage device area and a low voltage device area; a device isolation layer on the inactive area of the semiconductor substrate; and a gate oxide layer on the high voltage device area of the semiconductor substrate, the gate oxide layer having a uniform thickness.
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