Integrated thin-layer photovoltaic module
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United States of America Patent
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Issued Date -
Dec 18, 2008
app pub date -
Aug 13, 2008
filing date -
Feb 14, 2006
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Abandoned
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Abstract
The present invention is an integral thin-layer photovoltaic device, comprising a substrate with a coated layer of semiconductor materials, for example amorphous silicon of i-type conductivity, and made up of alternating areas, having different type of conductivity, different amounts of doping and/or band gap width, transparent and clear coatings on the front side, and electrical contacts. The alternating areas are formed in the initial film of semiconductor material as counter-comb, interleaved structures in the horizontal plane, and heterostructural areas are manufactured with variable ratios of crystal, micro-crystal, nano-crystalline and amorphous phases. The present invention is distinguished over prior art by several characteristics and advantages including a decreased number of process operations in its fabrication or manufacture, reduced consumption of semi-conductor material, simplified fabrication process, increased efficiency of solar energy conversion into electrical energy, and increased reliability.
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