Methods of controlling film deposition using atomic layer deposition
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United States of America Patent
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Issued Date -
Dec 11, 2008
app pub date -
Jun 7, 2007
filing date -
Jun 7, 2007
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Abandoned
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Abstract
Methods of manufacturing semiconductor devices and structures thereof are disclosed. A preferred embodiment comprises a method of forming a material layer. The method includes providing a semiconductor wafer, forming a first portion of a material layer over the semiconductor wafer at a first pressure, and forming a second portion of the material layer over the first portion of the material layer at a second pressure, the second pressure being less than the first pressure.
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