INTERLAYER OF TEXTURED SUBSTRATE FOR FORMING EPITAXIAL FILM, AND TEXTURED SUBSTRATE FOR FORMING EPITAXIAL FILM

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United States of America Patent

APP PUB NO 20080305322A1
SERIAL NO

12131990

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Abstract

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Provided is a buffer layer of a textured substrate for forming an epitaxial film that permit the formation of an epitaxial film having a high texture. The present invention provides a buffer layer of a textured substrate for forming an epitaxial film that is provided between a base material and an epitaxial film formed on at least one surface of the base material, in which the buffer layer has a single layer structure or a multilayer structure of not less than two layers and a layer in contact with the substrate is formed from an indium tin oxide. This buffer layer can have a multilayer structure, and can be provided on the ITO layer, with at least one layer formed from nickel, nickel oxide, zirconium oxide, a rare earth oxide, magnesium oxide, strontium titanate (STO), strontium titanate-barium (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium, and platinum.

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Patent Owner(s)

Patent OwnerAddress
TANAKA KIKINZOKU KOGYO K K7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 100-6422
CHUBU ELECTRIC POWER CO INC1 HIGASHI-SHINCHO HIGASHI-KU NAGOYA-SHI AICHI 461-0006

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DOI, TOSHIYA Kagoshima, JP 14 105
KASHIMA, NAOJI Aichi, JP 15 51
NAGAYA, SHIGEO Aichi, JP 28 109
SHIMA, KUNIHIRO Gunma, JP 22 48

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