Semiconductor device with integrated trench lateral power MOSFETs and planar devices
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United States of America Patent
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app pub date -
Apr 24, 2008
filing date -
Jan 16, 2002
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Abstract
Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
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