Method of Evaluating Quality of Silicon Single Crystal
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United States of America Patent
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Issued Date -
Dec 11, 2008
app pub date -
Aug 1, 2005
filing date -
Aug 5, 2004
priority date (Note) -
Abandoned
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Abstract
In the crystal growth rate (V), there is such a permissible range that the given quality of silicon single crystal can be maintained. This permissible range is determined in advance. The log data of crystal growth rate (V) is measured in the pulling up of silicon single crystal, and using the log data, the actual value of crystal growth rate (V) is determined. The actual value is compared with the permissible range. Any region of silicon single crystal corresponding to crystal growth rate (V) falling within the permissible range is judged as being a conforming region satisfying given standards, while any region of silicon single crystal corresponding to crystal growth rate (V) falling outside the permissible range is judged as being a defective region not satisfying given standards.
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