SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Dec 4, 2008
app pub date -
Nov 28, 2007
filing date -
Sep 21, 2006
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Abstract
A semiconductor laser device having a MQW structure composed of an active layer, a p-type second clad layer, and a p-type first clad layer sequentially stacked on an n-type clad layer provided on an n-type GaAs substrate is provided. In the semiconductor laser device, the n-type clad layer and the p-type first clad layer are lattice-matched to the GaAs substrate. A negative strain layer is provided in an intermediate layer of the first clad layer, in which a positive strain layer is provided on both surfaces or one surface of the negative strain layer.
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