Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors

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United States of America Patent

APP PUB NO 20080290337A1
SERIAL NO

11568791

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Abstract

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An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.

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Patent Owner(s)

Patent OwnerAddress
QIMONDA AGGUSTAV-HEINEMANN-RING 212 MUNICH 81739

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Effenberger, Franz Stuttgart, DE 26 125
Halik, Marcus Erlangen, DE 50 374
Klauk, Hagen Stuttgart, DE 45 525
Schmid, Guenter Hemhofen, DE 94 920
Zschieschang, Ute Stuttgart, DE 26 185

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