SILICON-RICH LOW-HYDROGEN CONTENT SILICON NITRIDE FILM
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United States of America Patent
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app pub date -
May 14, 2007
filing date -
May 14, 2007
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Abandoned
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Abstract
In one embodiment, a method for forming a silicon nitride film is provided. The method includes providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein; flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor; and forming a plasma in the PECVD reactor, whereby the silicon nitride film is deposited on the semiconductor substrate.
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