External cavity semiconductor laser and method for fabrication thereof

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United States of America Patent

SERIAL NO

11983843

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Abstract

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The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., .about.3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to provide a single mode of operation, and optionally a selectable mode of operation.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Luo, Hui Markham, CA 180 2956
Sherrer, David W Radford, VA 107 4596

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