SILICON MEMBER AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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app pub date -
Jul 14, 2008
filing date -
Feb 1, 2005
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Abandoned
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Abstract
There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 .OMEGA.cm or more and 100 .OMEGA.cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 .OMEGA.cm or more and 100 .OMEGA.cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300.degree. C. or more and 500.degree. C. or less.
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