POLISHING COMPOSITION AND METHOD FOR HIGH SELECTIVITY POLYSILICON CMP
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United States of America Patent
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Issued Date -
Nov 6, 2008
app pub date -
May 4, 2007
filing date -
May 4, 2007
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Abstract
The present invention provides a polishing composition and a method for removing polysilicon in preference to silicon dioxide, silicate glasses and/or silicon nitride via chemical-mechanical polishing during semiconductor device fabrication. In a preferred embodiment, the polishing composition includes an aqueous dispersion of ceria abrasive particles, from about 0.005% to about 0.15% by weight of a polyethyleneimine and a sufficient amount of an acid to adjust the pH of the polishing composition within the range of from about 4.7 to about 5.1. The polishing composition can be used to remove polysilicon via CMP at removal rates that are acceptable in semiconductor device fabrication applications while simultaneously suppressing the rate at which silicon dioxide, silicate glasses and silicon nitride are removed.
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