METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Jul 2, 2008
filing date -
Jul 29, 2004
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Abstract
A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.
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