Method for Depositing in Particular Metal Oxides by Means of Discontinuous Precursor Injection
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United States of America Patent
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Issued Date -
Nov 6, 2008
app pub date -
Mar 9, 2005
filing date -
Mar 27, 2004
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for the deposition of at least one layer on at least one substrate in a process chamber, whereby the layer comprises at least one component. The at least one first metal component is vaporised in a particularly conditioned carrier gas by means of a non-continuous injection of a starting material in the form of a liquid or dissolve in a liquid and at least one second component as chemically-reactive starting material. The starting materials are alternately introduced into the process chamber and the second starting material is a chemically-reactive gas or a chemically-reactive liquid.
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