CMOS image sensor and manufacturing method thereof
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United States of America Patent
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Jul 14, 2008
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Dec 15, 2004
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Abandoned
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Abstract
A gate insulation layer with a high dielectric constant for a CMOS image sensor formed by a damascene process. A silicide layer on a gate electrode layer is formed in both a pixel region and a peripheral circuit region, and a silicide layer on a source/drain region is formed only in a peripheral circuit.
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