PHASE CHANGE DIODE MEMORY
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United States of America Patent
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N/A
Issued Date -
Nov 6, 2008
app pub date -
May 4, 2007
filing date -
May 4, 2007
priority date (Note) -
Abandoned
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Abstract
An integrated circuit having a memory includes a semiconductor line and a phase change element contacting the semiconductor line. The phase change element provides a storage location. A diode junction is formed at the interface between the semiconductor line and the phase change element.
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