Cis Type Thin-Film Solar Cell and Process for Producing the Same

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United States of America Patent

APP PUB NO 20080271781A1
SERIAL NO

11721381

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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This invention provides a CIS-based thin film solar battery and a process for producing the same in which the formation of an alkali barrier layer and a metal backside electrode layer is carried out at a low cost in a short time to prevent such an unfavorable phenomenon that a light absorbing layer is separated from the interface of the light absorbing layer and the metal backside electrode layer. The CIS-based thin film solar battery (1) comprises a glass substrate (2), an alkali-free layer (7) such as silica, a metal backside electrode layer (3) having a laminate structure, a p-type CIS-based light absorbing layer (4), a high-resistance buffer layer (5), and an n-type window layer (6) stacked in that order. The layer (7), either alone or together with a first layer (3a) in the layer (3), can function as an alkali barrier layer (8) that can prevent and control the thermal diffusion of an alkali component into the light absorbing layer during the formation of the layer (4) from the substrate (2). In the layer (3a), crystal grains are fine and has high density. After the formation of the layer (7) on the substrate by RF or DC sputtering, the layer (3) is continuously formed on the layer (7) by DC sputtering.

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Patent Owner(s)

Patent OwnerAddress
SHOWA SHELL SEKIYU K KTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kushiya, Katsumi Tokyo, JP 19 737
Nagoya, Yoshinori Hokkaido, JP 9 261
Onodera, Masaru Tokyo, JP 15 98
Tanaka, Manabu Tokyo, JP 75 1226
Tanaka, Yoshiaki Tokyo, JP 382 4481

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