CONDUCTIVE VIA FORMATION
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United States of America Patent
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Issued Date -
Oct 23, 2008
app pub date -
Apr 23, 2007
filing date -
Apr 23, 2007
priority date (Note) -
Abandoned
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Abstract
A method involves depositing a first electrically conductive material, using a deposition technique, into a via formed in a material, the via having a diameter at a surface of the material of less than about 10 .mu.m and a depth of greater than about 50 .mu.m, so as to form a seed layer within the via, then creating a thickening layer on top of the seed layer by electrolessly plating the seed layer with a second electrically conductive material without performing any activation process within the via between via formation and the creating the thickening layer, and then electroplating a conductor metal onto the thickening layer until a volume bounded by the thickening layer within the via is filled with the conductor metal.
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