Manufacturing method for homogenizing the environment of transistors and associated device
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United States of America Patent
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Issued Date -
Oct 16, 2008
app pub date -
Apr 11, 2008
filing date -
Apr 12, 2007
priority date (Note) -
Abandoned
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Abstract
A semiconductor device is provided that includes a plurality of patterns. Each pattern includes at least one field effect transistor. Each field effect transistor includes a source region, a drain region, a channel region, and a gate region formed above the channel region. A portion of the plurality of patterns is formed in a single active area of a semiconductor substrate, where the area delimited by an isolation region. One of the source region and the drain region of each adjacent pattern are formed in said active area.
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