Semiconductor Laser Device and Method for Fabrication Thereof
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United States of America Patent
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Issued Date -
Oct 9, 2008
app pub date -
Mar 2, 2005
filing date -
Mar 15, 2004
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Abstract
In a semiconductor laser device (LD1), a semiconductor laser layer is formed on one face of a semiconductor substrate (1), and a p-type electrode (8) and an n-type electrode (11) are provided on the semiconductor laser layer side and the semiconductor substrate (1) side, respectively, so as to sandwich the semiconductor laser layer and the semiconductor substrate (1) therebetween. The p-type electrode (8) includes a first electrode (9) and a second electrode (10) that covers the first electrode (9).
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