SEMICONDUCTOR LIGHT-EMITTING DEVICE
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United States of America Patent
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Issued Date -
Oct 9, 2008
app pub date -
Mar 31, 2008
filing date -
Apr 3, 2007
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Abandoned
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Abstract
A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element.
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