System And Method For analyzing photomask Geometries
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United States of America Patent
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Issued Date -
Oct 2, 2008
app pub date -
Apr 2, 2007
filing date -
Apr 2, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In one embodiment, a method for analyzing photomask geometries is provided. An original geometry to be formed in an absorber layer of a photomask blank is received. The original geometry may be modified to generate a modified geometry that is offset from the original geometry. A simulation may be performed based on the modified geometry to determine a simulated geometry, wherein the simulated geometry is a simulated prediction of a geometry that would be written into a resist layer of the photomask blank if the modified geometry was used as input for imaging the resist layer. The simulated geometry may then be modified to determine a predicted original geometry, wherein the predicted original geometry is a prediction of a geometry that would be formed in the absorber layer of the photomask blank if an etch process was performed on an area of the absorber layer defined by the simulated geometry.
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