SEMICONDUCTOR PHOTODIODE AND METHOD FOR MANUFACTURING SAME, RADIATION DETECTION DEVICE, AND RADIATION IMAGING APPARATUS
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United States of America Patent
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Issued Date -
Oct 2, 2008
app pub date -
Mar 24, 2008
filing date -
Mar 28, 2007
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Abstract
A semiconductor photodiode includes: an insulative substrate; a first conductivity type semiconductor layer formed on the insulative substrate; an i-type semiconductor layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the i-type semiconductor layer; and a metal electrode. The metal electrode is provided between the insulative substrate and the first conductivity type semiconductor layer so that a peripheral face of the metal electrode is located inside a peripheral face of the first conductivity type semiconductor layer.
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