METHOD OF INTEGRATING MEMS STRUCTURES AND CMOS STRUCTURES USING OXIDE FUSION BONDING

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United States of America Patent

APP PUB NO 20080233672A1
SERIAL NO

11688808

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Abstract

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A method to fabricate a device including a micro-electro-mechanical system structure and a monolithic integrated circuit comprises using a first wafer as a first substrate, fabricating the micro-electro-mechanical system structure on the first substrate, and forming a first oxide layer over the micro-electro-mechanical system structure. The method further comprises using a second wafer as a second substrate, fabricating the monolithic integrated circuit on the second substrate, and forming a second oxide layer over the monolithic integrated circuit. The first wafer and the second wafer are arranged so that the first oxide layer opposes the second oxide layer. The micro-electro-mechanical system structure is aligned with the monolithic integrated circuit, the first oxide layer is contacted with the second oxide layer; and bonded with the second oxide layer.

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Patent Owner(s)

Patent OwnerAddress
NANOCHIP INC48041 FREMONT BLVD FREMONT CA 94538

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Inventor Name Address # of filed Patents Total Citations
Heck, John Berkeley, CA 114 2061

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