PRODUCTION PROCESS FOR HIGH PURITY SILICON
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United States of America Patent
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Issued Date -
Sep 25, 2008
app pub date -
Mar 17, 2008
filing date -
Mar 19, 2007
priority date (Note) -
Abandoned
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Abstract
The production process for high purity silicon of the present invention comprises (1) a step in which metal silicon is reacted with hydrogen chloride gas, (2) a step in which a reaction product obtained is distilled to obtain silicon tetrachloride, (3) a step in which silicon tetrachloride obtained is reacted with zinc gas in a gas phase to produce high purity silicon, (4) a step in which zinc chloride by-produced is reacted with hydrogen gas and (5) a step in which zinc and hydrogen chloride are separated and recovered from a reaction product obtained, wherein zinc separated and recovered in the step (5) is used as a raw material for zinc gas in the step (3), and hydrogen chloride separated and recovered in the step (5) is used as a raw material for hydrogen chloride gas in the step (1).
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