One time programming cell structure and method of fabricating the same

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United States of America Patent

APP PUB NO 20080232162A1
SERIAL NO

11728221

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Abstract

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A One Time Programming (OTP) cell structure, a method of fabricating an OTP structure, and a method of programming a OTP cell structure. The OTP structure comprises a semiconductor substrate; an n Metal-Oxide-Semiconductor (nMOS) programming structure formed on the substrate; wherein respective electrical contacts to a source of the nMOS programming structure and to a p-bulk of the substrate are separated for individual biasing of the source and the p-bulk of the substrate.

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Patent Owner(s)

Patent OwnerAddress
SYSTEMS ON SILICON MANUFACTURING CO PTE LTD70 PASIR RIS INDUSTRIAL DRIVE 1 SINGAPORE 519527

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuan, Hing Poh Singapore, SG 3 8
Sim, Kwang Ye Singapore, SG 2 7

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