Stop mechanism for trench reshaping process
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United States of America Patent
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Issued Date -
Sep 18, 2008
app pub date -
Mar 14, 2007
filing date -
Mar 14, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An opening, such as a trench, on a semiconductor substrate is annealed to smooth edges and corners of the opening. The anneal causes reflow of the material forming the walls of the opening, thereby smoothing out the edges and corners of the opening. After a desired amount of reflow is accomplished, the substrate is exposed to an oxidant such as O.sub.2 or H.sub.2O. The oxidant stops the reflow, thereby preventing undesired excess movement of material.
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