SEMICONDUCTOR DEVICE AND FABRICATION METHOD
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United States of America Patent
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Issued Date -
Sep 18, 2008
app pub date -
Feb 15, 2008
filing date -
Feb 15, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention provides an SOI device which has high breakdown voltage, wide stable operation range, good thermal dissipation, and high effective conductance and good frequency characteristics, and a method for fabricating the device. In a semiconductor device, a BOX region is formed on a part of a surface layer of a p substrate. The BOX region is formed around a point where a vertical line is dropped from the center of the gate structure portion, and isolates a drain region and an extended drain region from the p.sup.- substrate. The thickness of the drain region is in a 150 nm to 300 nm range, and the thickness of the BOX region is 150 nm or more.
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