PATTERN EXPOSURE METHOD AND PATTERN EXPOSURE APPARATUS

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United States of America Patent

SERIAL NO

12098089

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Abstract

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A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

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Patent Owner(s)

Patent OwnerAddress
HITACHI VIA MECHANICS LTDEBINA-SHI KANAGAWA-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Naito, Yoshitatsu Ebina-shi, JP 7 86
OSHIDA, Yoshitada Ebina-shi, JP 57 1031
Suzuki, Mituhiro Ebina-shi, JP 4 19
Uchiyama, Bunji Ebina-shi, JP 3 19
Yamaguchi, Tsuyoshi Ebina-shi, JP 97 812

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