Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 13, 2010
Grant Date -
Aug 28, 2008
app pub date -
Feb 23, 2007
filing date -
Feb 23, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully