Importance

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Abstract

Manufacturing semiconductor device by steps of: a) providing substrate with antireflective coating or underlayer, b) applying first photosensitive composition over substrate, c) exposing first composition to radiation to produce first pattern, d) developing exposed first composition to produce an imaged bilayer stack, e) rinsing the stack, f) applying fixer to the stack, g) applying optional bake, h) rinsing the stack, i) applying second optional bake, j) applying second photosensitive composition onto the stack to produce multilayer stack, k) exposing second composition to produce second pattern offset from first pattern, l) developing exposed second composition to produce multilayer stack, and m) rinsing multilayer stack;the photosensitive compositions have photoacid generator and substantially aqueous base insoluble polymer whose solubility increases upon treatment with acid and further comprises an anchor group, and the fixer is a polyfunctional compound reactive with anchor group, but does not contain silicon and the substrate stays within a lithographic cell from at least first coating step until at least after final exposure.

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First Claim