Semiconductor Substrate Comprising a Pn-Junction and Method For Producing Said Substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 21, 2008
app pub date -
Nov 9, 2005
filing date -
Dec 15, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An SOI substrate comprising a carrier substrate, a dielectric layer and a semiconductor layer. A continuous pn junction is realized in the semiconductor layer, which pn junction can be produced by applying differently doped partial layers on the SOI substrate. In this way, it is possible to use an SOI substrate for producing semiconductor components and, in particular, rear side diodes.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully