Method for Producing Gan Film, Semiconductor Device, Method for Generating Thin Film of Nitride of Group III Element and Semiconductor Device Having Thin Film of Nitride of Group III Element
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United States of America Patent
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Issued Date -
Aug 14, 2008
app pub date -
Jan 31, 2006
filing date -
Jan 31, 2005
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Abstract
A GaN layer (12) is formed on a planarized surface of a ZnO substrate (11) to provide a nitride semiconductor device (10) having the GaN layer. The GaN layer (12) is formed by a first film-forming step of allowing epitaxial growth of GaN at a temperature not higher than 300.degree. C., and a second film-forming step of allowing epitaxial growth of GaN at a temperature not lower than 550.degree. C. on a film of GaN formed by the first film-forming step.
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