T-gate forming method and metamorphic high electron mobility transistor fabricating method using the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 31, 2008
app pub date -
Sep 5, 2007
filing date -
Jan 30, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for forming a T-gate of a metamorphic high electron mobility transistor is provided. The method includes sequentially laminating a plurality of resist films on a substrate; forming a T-shaped pattern in the laminated resist films using electron beam lithography; forming a gate metal layer on the substrate where the T-shaped pattern has been formed; attaching an adhesion member to the gate metal layer formed on a top surface of the laminated resist films and detaching the adhesion member to thereby remove the gate metal layer; and removing the laminated resist films.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully