METHOD OF PRODUCTION OF A MAGNETORESISTANCE EFFECT DEVICE

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United States of America Patent

SERIAL NO

12058147

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Abstract

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A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

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Patent Owner(s)

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ANELVA CORPORATIONFUCHU-SHI 8-1 YOTSUYA 5-CHOME TOKYO 183

International Classification(s)

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  • 2008 Application Filing Year
  • G11B Class
  • 2667 Applications Filed
  • 1739 Patents Issued To-Date
  • 65.21 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances200820092010201120122013201420152016201720182019202020210255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DJAYAPRAWIRA, David D Tama-shi, JP 10 184
MAEHARA, Hiroki Mitaka-shi, JP 28 217
NAGAI, Motonobu Akishima-shi, JP 14 176
TSUNEKAWA, Koji Hachiooji-shi, JP 53 574
WATANABE, Naoki Nishi-Tokyo-shi, JP 375 4361
YAMAGATA, Shinji Fuchu-shi, JP 47 682
YUASA, Shinji Tsukuba-shi, JP 56 838

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Patent Citation Ranking

  • 22 Citation Count
  • G11B Class
  • 77.47 % this patent is cited more than
  • 17 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges91956363176935134186742101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05010015020025030035040045050055060065070075080085090095010001050

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