Method and Apparatus For Fabricating Polycrystalline Silicon Film Using Transparent Substrate
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United States of America Patent
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Nov 14, 2006
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Dec 26, 2005
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Abstract
Provided is a method and apparatus for fabricating a polycrystalline silicon film using a transparent substrate. The method includes forming a light absorption layer on a surface of the transparent substrate; and heating the light absorption layer using irradiation of Rapid Thermal Process (RTP) light source, while depositing the polycrystalline silicon film on the light absorption layer.
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