Method for forming a fine pattern in a semiconductor
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United States of America Patent
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Issued Date -
Jul 10, 2008
app pub date -
May 18, 2007
filing date -
Jan 5, 2007
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Abstract
A method for forming a fine pattern in a semiconductor device includes the steps of: coating a first photoresist composition over a semiconductor substrate including an underlying layer, thereby forming a first photoresist film; exposing and developing the first photoresist film, thereby forming a first photoresist pattern; forming a second photoresist film that does not react with the first photoresist pattern over the resulting structure; and exposing and developing the second photoresist film, thereby forming a second photoresist pattern; wherein the first and second photoresist patterns each comprise a plurality of elements, and individual elements of the second photoresist pattern are located between adjacent individual elements of the first photoresist pattern.
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