Semiconductor apparatus using ion beam
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United States of America Patent
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Issued Date -
Jul 10, 2008
app pub date -
Jan 8, 2008
filing date -
Jan 8, 2007
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Abandoned
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Abstract
Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.
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