DEVICE FOR PRODUCING THE GROWTH OF A SEMICONDUCTOR MATERIAL
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United States of America Patent
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Issued Date -
Jul 10, 2008
app pub date -
Jan 10, 2008
filing date -
Jan 10, 2007
priority date (Note) -
Abandoned
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Abstract
This device for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the said semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the said bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The said device further comprises an element (3) capable of floating on the surface of the said melt, and equipped with a substantially central bore (4), intended on the one hand for receiving a seed crystal (5) or for permitting the nucleation leading to the preparation of a seed crystal (5'), and also of supporting the said seed crystal (5, 5') above the melt while maintaining it in contact with the said melt in order to permit the continued crystallization from the said seed crystal (5, 5') by lowering the temperature gradient.
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