Method for cleaning silicon wafer
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United States of America Patent
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Issued Date -
Jul 3, 2008
app pub date -
Dec 3, 2007
filing date -
Dec 29, 2006
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a method for cleaning a silicon wafer, including (S1) a first cleaning step for cleaning surfaces of a silicon wafer using an SC-1 cleaning solution according to standard clean 1; (S2) a second cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the first cleaning step, using an SC-2 cleaning solution according to standard clean 2; (S3) a third cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the second cleaning step, using a hydrogen fluoride (HF) solution; and (S4) a fourth cleaning step for cleaning the surfaces of the silicon wafer, cleaned in the third cleaning step, using an ozone water. The present invention removes effectively metallic impurities on the surfaces of the silicon wafer and improves the surface roughness of the silicon wafer, and thus is capable of providing a silicon wafer with a remarkably improved physical characteristic.
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