Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
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United States of America Patent
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Issued Date -
Jun 26, 2008
app pub date -
Dec 21, 2006
filing date -
Dec 21, 2006
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Abandoned
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Abstract
A composition and associated method for the chemical mechanical planarization (CMP) of tungsten-containing substrates on semiconductor wafers are described. The composition contains an anionic fluorosurfactant, a per-type oxidizer (e.g., hydrogen peroxide), and iron. The composition and associated method are effective in affording greatly reduced levels of tungsten etching during tungsten CMP. In some embodiments, certain aspartic acid compounds are also present in the composition and are effective in affording even lower levels of tungsten etching during tungsten CMP.
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