DEPOSITION OF SILICON GERMANIUM NITROGEN PRECURSORS FOR STRAIN ENGINEERING
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United States of America Patent
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Issued Date -
Jun 19, 2008
app pub date -
Sep 21, 2007
filing date -
Dec 18, 2006
priority date (Note) -
Abandoned
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Abstract
Methods for making a semiconductor device are disclosed herein. In general, the disclosed methods utilize compounds containing silicon, nitrogen, and germanium. Furthermore, the methods and compositions described are particularly applicable for formation of layers over gate structures or electrodes, which are often used in the manufacture of devices such as transistors. The silicon, nitrogen, and germanium containing compounds may allow stress/strain tuning and engineering of deposited layers over the gate structure.
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