INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR

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United States of America Patent

APP PUB NO 20080142897A1
SERIAL NO

11613149

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Abstract

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An integrated circuit system is provided including forming a circuit element on a wafer, forming a stress formation layer having a non-uniform profile over the wafer, and forming an interlayer dielectric over the stress formation layer and the wafer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGAM CAMPEON 1-15 NEUBIBERG 85579

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Belyansky, Michael P Bethel, CT 74 876
Chen, Xiangdong Poughquag, NY 216 2796
Fen, Jamin F Wappingers Falls, NY 3 22
Kim, Jun Jung Fishkill, NY 10 134
Knoefler, Roman Dresden, DE 30 916
Teh, Young Way Singapore, SG 28 419
Yang, Daewon Hopewell Junction, NY 31 190

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