Semiconductor device comprising a doped metal comprising main electrode

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United States of America Patent

SERIAL NO

11977027

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A semiconductor device is provided comprising a main electrode (4) and a dielectric (3) in contact with the main electrode (4), the main electrode (4) comprising a material having a work function and a work function modulating element (6) for modulating the work function of the material of the main electrode (4) towards a predetermined value. The main electrode (4) furthermore comprises a diffusion preventing dopant element (5) for preventing diffusion of the work function modulating element (6) towards and/or into the dielectric (3). Methods for forming such a semiconductor device are also described.

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Patent Owner(s)

Patent OwnerAddress
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)KAPELDREEF 75 LEUVEN 3001
TEXAS INSTRUMENTS INC12500 TI BOULEVARD MS 3999 DALLAS TX 75243
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (TSMC)NO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shou-Zen Tervuren, BE 81 733
Kittl, Jorge Adrian Waterloo, BE 18 247
Lauwers, Anne Aartselaar, BE 8 160
Veloso, Anabela Leuven, BE 22 200
Yu, HongYu Leuven, BE 52 826

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