Method to reduce semiconductor device leakage
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United States of America Patent
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Issued Date -
Jun 12, 2008
app pub date -
Dec 7, 2006
filing date -
Dec 7, 2006
priority date (Note) -
Abandoned
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Abstract
Various embodiments of the present invention relate to systems, devices, and methods for treating a semiconductor substrate, such as a silicon wafer, in order to reduce current leakage therein. A semiconductor substrate is provided a plurality of heating treatments that create a denuded zone adjacent to a surface of the substrate and a core zone below the denuded zone. Oxygen impurities within the denuded zone are removed through an oxygen out-diffusion heat treatment. A plurality of macroscopic bulk micro defects is generated within the core zone through the combination of an agglomeration heat treatment and a macroscopic growth heat treatment. This plurality of macroscopic bulk micro defects inhibits migration of metallic contaminants that are located within the substrate. For exemplary purposes, certain embodiments are described relating to a semiconductor wafer heated in a sequence of three treatments. Each treatment has a temperature range in which the substrate is heated and an associated time range during which the treatment occurs.
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