Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor
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United States of America Patent
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Jan 7, 2008
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May 30, 2003
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Abstract
A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.
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