Powder metallurgy crucible for aluminum nitride crystal growth
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United States of America Patent
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app pub date -
Mar 23, 2007
filing date -
Sep 21, 2001
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Abstract
A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W--Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta.sub.2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W--Ta); tungsten (W); and combinations thereof.
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