Polishing Pad and a Chemical-Mechanical Polishing Method
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United States of America Patent
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Issued Date -
May 29, 2008
app pub date -
Nov 16, 2007
filing date -
Nov 28, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 .mu.m, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily separated from the polishing pad surface.
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